| PART |
Description |
Maker |
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CA726EF-A10 MC-4516CA726EF-A80 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC
|
| MC-4516CB646XF-A10 MC-4516CB646XF-A80 MC-4516CB646 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-4516CA726XF-A10 MC-4516CA726PF-A10 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-4516CB647EF-A75 MC-4516CB647PF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| THMY721661BEG-80 THMY721661BEG-10 |
16M Word x 72 Bit Synchronous DRAM Module(16M字x 72位同步DRAM模块) 1,600字72位同步DRAM模块,600字72位同步的DRAM模块
|
Toshiba, Corp.
|
| MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
| M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米（100万字6位）6K的缓存内存（1024字由16位）的SRAM
|
Mitsubishi Electric, Corp.
|
| UPD23C16000BL UPD23C16000BLGX UPD23C16000BLGX-XXX |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
|
NEC
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK）（4分字× 32位同步动态内存模块）
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V12850J-XXXTN MR27V12850J |
8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|
